TSM2N7000KCT
RoHS

TSM2N7000KCT

TSM2N7000KCT

TAIWAN SEMICONDUCTOR

60V 0.3A Single N-Channel Power MOSFET

TSM2N7000KCT

In Stock: 5537
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Products Specifications
RoHSCompliant
Case/PackageTO-92
Test Current2.5 mA
Zener Voltage75 V
Forward Voltage1 V
Clamping Voltage70.1 V
Lifecycle StatusNRND (Last Updated: 2 years ago)
Breakdown Voltage51 V
Input Capacitance7 pF
Peak Pulse Power 1.5 kW
Power Dissipation200 mW
Number of Channels2
Peak Pulse Current21.4 A
Max Breakdown Voltage9.8 V
Min Breakdown Voltage25.4 V
Reverse Recovery Time50 ns
Reverse Standoff Voltage24 V
Max Reverse Leakage Current1 µA
Gate to Source Voltage (Vgs)1.65 V
Manufacturer Lifecycle StatusNRND (Last Updated: 2 years ago)
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Max Forward Surge Current (Ifsm)2.5 A
Max Repetitive Reverse Voltage (Vrrm)250 V