TSM3443CX6RF
RoHS

TSM3443CX6RF

TSM3443CX6RF

Taiwan Semiconductor

Power Field-Effect Transistor, 4.7A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6

TSM3443CX6RF

In Stock: 8946
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Products Specifications
RoHSCompliant
MountSurface Mount
Width1.7 mm
Height1.1 mm
Length3.1 mm
Case/PackageSOT-26
Number of Pins6
Input Capacitance640 pF
Power Dissipation2 W
Number of Elements1
Turn-On Delay Time35 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Max Power Dissipation2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance100 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)4.7 A